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时间:2014-12-11 13:28 点击:
    1. Yi Liu, Fa Luo, Jinbu Su, Wancheng Zhou, Dongmei Zhu, Zhimin Li. Enhanced mechanical, dielectric and microwave absorption properties of cordierite based ceramics by adding Ti3SiC2 powders. Journal of Alloys and Compounds, 2015, 619: 854–860. 
    2. Zhimin Li, Fa Luo, Chuangchuang He, Zi Yang, Peixian Li, Yue Hao. Improving the microwave dielectric properties of Ti3SiC2 powders by Al doping. Journal of Alloys and Compounds, 2015, 618: 508–511. 
    3. Investigation of trap states under Schottky contact in GaN/AlGaN/AlN/GaN high electron mobility transistors; APPLIED PHYSICS LETTERS; Vol.104No.9, 093504, Xiao-Hua Ma*, Wei-Wei Chen, Bin Hou, Kai Zhang, Jie-Jie Zhu, Jin-Cheng Zhang, Xue-Feng Zheng, and Yue Hao, 2014
    4. Investigation of gate leakage mechanism in Al2O3/Al0.55Ga0.45N/GaN metal-oxidesemiconductor high-electron-mobility transistors; APPLIED PHYSICS LETTERS; Vol.104 No.15, 153510, Jie-Jie Zhu, Xiao-Hua Ma*, Bin Hou, Wei-Wei Chen, and Yue Hao, 2014
    5. Quantitative characterization of interface traps in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by dynamic capacitance dispersion technique; APPLIED PHYSICS LETTERS; Vol.103 No.3, 033510, Xiao-Hua Ma*,Jie-Jie Zhu, Xue-Yang Liao, Tong Yue, Wei-Wei Chen, and Yue Hao, 2014
    6. High-Performance Microwave Gate-Recessed AlGaN/AlN/GaN MOS-HEMT With 73% Power-Added Efficiency;  IEEE ELECTRON DEVICE LETTERS; VOL. 32, NO. 5, 626, Yue Hao, Ling Yang, Xiaohua Ma, Jigang Ma, Menyi Cao, Caiyuan Pan, Chong Wang, and Jincheng Zhang, 2011
    7. Behaviors of gate induced drain leakage stress in lightly doped drain n-channel MOSFET; APPLIED PHYSICS LETTERS; Vol.95 NO.15, 152107, X. H. Ma*, Y. R. Cao, H. X. Gao, H. F. Chen, and Y. Hao, 2009
    8. Study of surface leakage current of AlGaN/GaN high electron mobility transistors;  APPLIED PHYSICS LETTERS; Vol.104 NO.15,153509,Y.H.Chen,K.Zhang,M.Cao,S.L.Zhao,J.C.Zhang,X.H.Ma*,and Y.Hao, 2014
    9. Enhancement-mode Al2O3/InAlN/AlN/GaN metal–insulator–semiconductor high-electron-mobility transistor with enhanced breakdown voltage using fluoride-based plasma treatment;  Applied Physics Express; Vol.7 NO.7,071001,S.H.Zhao,J.S.Xue,P.Zhang,J.Luo,X.J.Fan,J.C.Zhang,X.H.Ma*,and Y.Hao, 2014
    10. Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis; AIP ADVANCES; Vol.4, NO.3, 037108, J.J.Zhu, X.H.Ma*, B.Hou, W.W.Chen, and Y.Hao, 2014
    11. Reliability investigation of AlGaN/GaN high electron mobility transistors;  MICROELECTRONICS RELIABILITY;  Vol.54,NO.6-7,1293,W.W.Chen,X.H.Ma*,B.Hou,S.L.Zhao,J.J.Zhu,J.C.Zhang,and Y.Hao, 2014
    12. LI Hui-hui, HUANG Yun-xia, LI Zhi-min, YAO Yin-hua, ZHANG Shu-yuan. Preparation and infrared emissivities of alkali metal doped ZnO powders. J. Cent. South Univ., 2014, 21: 3449−3455. 
    13. Maolin Zhang, Tao Ning, Shuyuan Zhang, Zhimin Li, Zhanheng Yuan, Quanxi Cao. Response time and mechanism of Pd modified TiO2 gas sensor. Materials Science in Semiconductor Processing, 2014, 17: 149–154. 
    14. Yunxia Huang, Stephanie L. Candelaria, Yanwei Li, Zhimin Li, Jianjun Tian, Lili Zhang, Guozhong Cao. Sulfurized activated carbon for high energy density supercapacitors. Journal of Power Sources, 2014, 252: 90-97.
    15. Zhimin Li, Xiaohei Wei, Fa Luo, Wancheng Zhou, Yue Hao. Microwave dielectric properties of Ti3SiC2 powders synthesized by solid state reaction. Ceramics International, 2014, 40: 2545–2549. (SCI: 000330820600168 ) 
    16. Trap states in AlGaN channel high-electron-mobility transistors;  APPLIED PHYSICS LETTERS; Vol.103 No.21, 212106, ShengLei Zhao, Kai Zhang, Wei Ha, YongHe Chen, Peng Zhang, JinCheng Zhang, XiaoHua Ma*, and Yue Hao, 2013
    17. Trap states in InAlN/AlN/GaN-based double-channel high electron mobility transistors;  JOURNAL OF APPLIED PHYSICS; Vol.113 No.17, Kai Zhang, JunShuai Xue, MengYi Cao, LiYuan Yang, YongHe Chen, JinCheng Zhang, XiaoHua Ma* and Yue Hao, 2013
    18. Pengfei Yan, Toshiyuki Mori, Yuanyuan Wu, Zhimin Li, Graeme John Auchterlonie, Jin Zou, John Drennan. Microstructural and chemical characterization of ordered structure in yttrium doped ceria. Microscopy and Microanalysis, 2013, 19(1): 102-110.
    19. Guifang Li, Zhimin Li, Quanxi Cao, Yunxia Huang, Junyan Shi. Synthesis and photoluminescence characteristics of YAl3(BO3)4:Tb3+ phosphors by combustion process. International Journal of Applied Ceramic Technology, 2013, 10(4): 631-637.
    20. Zhimin Li, Toshiyuki Mori, Pengfei Yan, Yuanyuan Wu, Zhipeng Li. Preparation and performance of intermediate-temperature fuel cells based on Gd-doped ceria electrolytes with different compositions. Materials Science & Engineering B, 2012, 177 (17): 1538– 1541. (SCI: 000309853000004)
    21. Xiaolei Su, Wancheng Zhou, Jie Xu, Junbo Wang, Xinhai He, Chong Fu, Zhimin Li. Preparation and Dielectric Property of Al and N Co-Doped SiC Powder by Combustion Synthesis. J. Am. Ceram. Soc., 2012, 95: 1388–1393. 
    22. Characterization of Al2O3/GaN/AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors with different gate recess depths; Chinese Physics B;  Vol.20 No.2, Ma Xiao-Hua*, Pan Cai-Yuan, Yang Li-Yuan,Yu Hui-You, Yang Ling, Quan Si, Wang Hao, Zhang Jin-Cheng and Hao Yue, 2011
    23. The reliability of AlGaN/GaN high electron mobility transistors under step-electrical stresses;  Chinese Physics B;  vol.20, No.12, Ma Xiao-Hua*, Jiao Ying, Ma Ping,He Qiang, Ma Ji-Gang, Zhang Kai, Zhang Hui-Long, Zhang Jin-Cheng, and Hao Yue,2011
    24. Hot carrier injection degradation under dynamic stress; Chinese Physics B;  vol.20 No.3, Ma Xiao-Hua*, Cao Yan-Rong, Hao Yue, and Zhang Yue, 2011
    25. Study on the negative bias temperature instability effect under dynamic stress; Chinese Physics B; Vol.19 No.11, Ma Xiao-Hua*, Cao Yan-Rong, and Hao Yue, 2010
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